Effect of Frequency and Temperature on Electrical and Dielectric Properties of InSbX3 (X=Se and Te) Amorphous Thin Films

Select Volume / Issue:

• Volume 2,Issue 1, Jan. 2014

Year:

2014

Type of Publication:

Article

Keywords:

A C Conductivity, Dielectric Properties, Relaxation Studies, Correlated Barrier Hopping Model, Chalcogenide Glassy

Authors:

E. Abd El-Wahabb; M. A. Afifi; A. E. Bekheet; H. E. Atyia; A. H. Ashor

Journal:

IJISM

Volume:

2

Number:

1

Pages:

100-106

Month:

January

Abstract:

Films of different thickness of chalcogenide InSbX3(X=Se and Te) glassy system have been prepared by thermally evaporation technique. The amorphous structure for all studied films identified by X-ray diffraction analysis. The present work aimed to study the temperature and frequency dependence of ac conductivity and dielectric properties in the frequency range (102–105 Hz)over the temperature range (303 – 393 K).The obtained data reveal that Ac conductivity σac(ω) obey the relation σac(ω) = Aωs, where s is the frequency exponent and temperature dependent. The decrease of the frequency exponent s with increasing temperature suggests that the Correlated Barrier Hopping (CBH) model is the dominant conductivity mechanism. The dielectric constant ε1and dielectric loss ε2 increase with increasing temperature and decrease with increasing frequency. The obtained values of the maximum barrier height WM that calculated according to Giuntini,s equation are in good agreement with the theory of hopping of charge carriers over a potential barrier as suggested by Elliott in the case of chalcogenide glasses. Values of the relaxation time were determined at different temperatures. The obtained values of activation energy of relaxation (Eo) are equal to 0.86 and 0.46eV for InSbSe3 and InSbTe3 films respectively. Values of the maximum barrier height WM ,the relaxation time and the activation energy of relaxation for the two compounds were also determined.

Full text: IJISM_55_Final.pdf [Bibtex]